FIN-TRANSISTOR FORMED ON A PATTERNED STI REGION BY LATE FIN ETCH

摘要

In the manufacture of complex three-dimensional semiconductor transistors in connection with planar transistors on the basis of a replacement gate method and self-aligned contact elements prepared by the half conductor webs are produced in an early process step, i.e, in the formation of a flat trench insulations, wherein the final electrically effective height of the half conductor webs according to the provision of self-aligned contact elements and during the exchange gate method is set.