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METHOD OF MANUFACTURING RERAM OF THREE-DIMENSIONAL STACKED MEMORY TYPE HAVING INDEPENDENT MEMORY CELL STRUCTURE AND THE THREE-DIMENSIONAL STACKED MEMORY
METHOD OF MANUFACTURING RERAM OF THREE-DIMENSIONAL STACKED MEMORY TYPE HAVING INDEPENDENT MEMORY CELL STRUCTURE AND THE THREE-DIMENSIONAL STACKED MEMORY
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机译:具有独立记忆细胞结构和三维堆叠记忆的三维堆叠记忆体的制造方法
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摘要
PURPOSE: A method of manufacturing a resistive random access memory device of a three-dimensional stacked memory type having an independent memory cell structure and the three-dimensional stacked memory are provided to control a limit to miniaturization by producing the resistive random access memory device of a three-dimensional stacked memory structure. CONSTITUTION: A silicon substrate(10) is provided. An insulating material layer(20) is deposited on the top of the substrate. A bottom electrode layer(30) is deposited on the insulating material layer. A metal oxide(40) having resistive switching characteristics is deposited on the substrate. An upper electrode(50) is formed on a top insulating material layer.
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