METHOD OF MANUFACTURING ReRAM OF THREE-DIMENSIONAL STACKED MEMORY TYPE HAVING INDEPENDENT MEMORY CELL STRUCTURE

摘要

PURPOSE: A method of manufacturing a ReRAM(Resistive Random Access Memory) device of a three-dimensional stacked memory type having an independent memory cell structure is provided to prevent cross talk between memory cells by insulating a gap between metal oxides having resistance switching characteristics. CONSTITUTION: A silicon substrate(10) is provided. An insulating material layer(20) is formed on the substrate. A bottom electrode layer(30) is formed on an upper portion of the insulating material layer. A metal oxide(40) is formed on the upper portion of the substrate. An upper electrode(50) is formed on the upper portion of a top insulating material layer.