首页> 外国专利> SEMICONDUCTOR CERAMIC AND STACK SEMICONDUCTOR CERAMIC CAPACITOR CAPABLE OF OBTAINING HIGH DIELECTRIC PROPERTY AND HIGH INSULATION RESISTANCE

SEMICONDUCTOR CERAMIC AND STACK SEMICONDUCTOR CERAMIC CAPACITOR CAPABLE OF OBTAINING HIGH DIELECTRIC PROPERTY AND HIGH INSULATION RESISTANCE

机译:具有高介电性能和高绝缘电阻的半导体陶瓷和叠层半导体陶瓷电容器

摘要

PURPOSE: A semiconductor ceramic and stack semiconductor ceramic capacitor are provided to obtain semiconductor ceramic having high electrostatic capacity.;CONSTITUTION: In BaTiO3 based semiconductor ceramic, Ti site of BaTiO3 is concurrently substituted by Ga and Nb. The BaTiO3 based semiconductor ceramic is represented by BaA(Ti1-A-BGaANbB)BO3. The molar ratio of A/B is 0.92-100 and the molar ratio of A/B is 0.900-1.060. The BaTiO3 based semiconductor ceramic powder is represented by BaA(Ti1-A-BGaANbB)BO3. The BaTiO3 based semiconductor ceramic powder has maximum particle size of 1 micro meter or less. A stack semiconductor ceramic capacitor includes a semiconductor ceramic layer which is composed of the BaTiO3 based semiconducting ceramic. The stack semiconductor ceramic capacitor comprises inner electrodes(2a-2e), part microsomes(1) and outer side electrodes(3a,3b).;COPYRIGHT KIPO 2013
机译:目的:提供一种半导体陶瓷和叠层半导体陶瓷电容器,以得到具有高静电容量的半导体陶瓷。;组成:在BaTiO3基半导体陶瓷中,BaTiO3的Ti部位同时被Ga和Nb取代。 BaTiO 3基半导体陶瓷由BaA(Ti 1 -A-BGaANbB)BO 3表示。 A / B的摩尔比为0.92〜100,A / B的摩尔比为0.900〜1.060。 BaTiO 3基半导体陶瓷粉末由BaA(Ti 1 -A-BGaANbB)BO 3表示。 BaTiO 3基半导体陶瓷粉末的最大粒径为1微米或更小。堆叠半导体陶瓷电容器包括由BaTiO 3基半导体陶瓷组成的半导体陶瓷层。堆叠式半导体陶瓷电容器包括内部电极(2a-2e),部分微粒体(1)和外部电极(3a,3b).; COPYRIGHT KIPO 2013

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