METHOD OF FABRICATING NANOENERGETIC METERIALS AND THIN FILM TRANSISTOR USING METAL-OXIDE NANOWIRE

摘要

The present invention relates to a method of manufacturing a metal oxide nanowire, and a method of manufacturing a nano-activated material and a thin film transistor using the same, and to grow and grow a metal oxide nanowire from a metal layer or a substrate through heating of a metal plate or a substrate By producing the highly reactive nano-activated material by depositing aluminum, which is a reactive metal, on the metal oxide nanowires, it is more responsive than the activated material prepared using the conventional nanopowder, and is advantageous for low ignition temperature and impurities reduction. It works.