Highly Stabilized p-type Zinc Oxide Thin Film and Fabrication Method Thereof

摘要

PURPOSE: A highly stabilized P type zinc oxide thin film and a manufacturing method thereof are provided to easily control a nitrogen doping density which is activated by using a nitrogen injection quantity, a thermal process temperature or a combination thereof. CONSTITUTION: An N type zinc oxide thin film is formed on a substrate(s100). Nitrogen is physically injected to an N type zinc oxide thin film(s200). The zinc oxide thin film of an insulator is made(s300). A P type zinc oxide thin film is made by thermally processing the zinc oxide thin film with the nitrogen(s400,s500).