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METHOD FOR PREPARING NANOPOROUS ULTRA LOW DIELECTRIC FILM INCLUDING HIGH TEMPERATURE OZONE TREATMENT, AND NANOPOROUS ULTRA LOW DIELECTRIC FILM PREPARED THEREBY
METHOD FOR PREPARING NANOPOROUS ULTRA LOW DIELECTRIC FILM INCLUDING HIGH TEMPERATURE OZONE TREATMENT, AND NANOPOROUS ULTRA LOW DIELECTRIC FILM PREPARED THEREBY
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机译:包括高温臭氧处理的纳米级超低介电薄膜的制备方法及由此制备的纳米级超低介电薄膜
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摘要
The present invention provides a method for preparing a nanoporous ultra-low dielectric thin film including a high-temperature ozone treatment and nanoporous ultra-low dielectric thin film prepared by the same method. The method includes preparing a mixture of an organic silicate matrix-containing solution and a reactive porogen-containing solution; coating the mixture on a substrate to form a thin film; and heating the thin film with an ozone treatment. The prepared nanoporous ultra-low dielectric thin film could have a dielectric constant of about 2.3 or less and a mechanical strength of about 10 GPa or more by improving a pore size and a distribution of pores in the thin film by performing an ozone treatment with high temperature and optimization of the ozone treatment temperature.
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