Strained semiconductor-on-insulator structure and methods for making strained semiconductor-on-insulator structures

摘要

The present invention is a semiconductor layer having a strained semiconductor-on insulator structure would -one. According to an embodiment of the invention, a semiconductor-on-insulator structure, the first layer is a glass or glass containing semiconductor material is adhered to a second layer including a ceramic, a semiconductor, and a glass or glass-the CTE of the ceramic the first is selected to belong to the tensile strain (tensile strain) of the first layer. The invention also tensile semiconductor-insulator structure, a method of producing -one. ; A semiconductor, insulator, glass, side, see, tensile strain