Synthesis of SiC powder with carbon deposition on the silicon powder

摘要

The present invention comprises the steps of (a) selecting a high purity silicon powder; (b) distilling the hydrocarbon compound one or more times; (c) immersing the hydrocarbon in silicon powder in a tubular furnace at 800-1200 ° C. for 0.5-3 hours; (d) heat-treating the carbon powder deposited silicon powder to react with silicon carbide; And (e) heating in the presence of air to remove excess carbon. The reaction is completed when the temperature is increased by depositing carbon on the high purity silicon powder through the heat treatment process only with high purity hydrocarbon. Since it is possible to synthesize high-purity silicon carbide by adjusting the heating temperature while injecting air thereafter, the problem that the yield is reduced or the greenhouse gas is generated by the silicon monoxide and carbon monoxide generated when using silica and carbon as a raw material. Conventional silicon carbide, such as the problem of non-homogeneity generated when carbon black is mixed with silicon powder and the limitation of purity of carbon black, and the use of a binder to mix silicon powder and carbon black. The present invention provides a method for synthesizing silicon carbide with carbon deposition on silicon powder that can solve the problems of yield reduction, environmental problems, and inhomogeneity accompanying mixing.