Ambi-polar memory device based on reduced graphene oxide using metal nanoparticle and the method for preparation of Ambi-polar memory device

摘要

PURPOSE: A bi-polar memory device based on a reduced graphene oxide using a metal nano-particle and a method for preparation of bi-polar memory device are provided to align large amount of graphene to be absorbed on a substrate by a hydrophobic film and a hydrophile film. CONSTITUTION: In a bi-polar memory device based on a reduced graphene oxide using a metal nano-particle and a method for preparation of bi-polar memory device, an oxide is deposited on a substrate. A graphene oxide layer is deoxidized. A metal electrode, an oxide layer, and a metal nano-particle layer, and a gate electrode are laminated.