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Semiconductor arrangement i.e. thermionic generator, for direct conversion of thermal energy into electrical energy, has metallic conductor formed at hot side, and another conductor formed on cold side with surface of work function
Semiconductor arrangement i.e. thermionic generator, for direct conversion of thermal energy into electrical energy, has metallic conductor formed at hot side, and another conductor formed on cold side with surface of work function
The arrangement has a metallic conductor (1) formed at a hot side and comprising a surface of high work function. A thin electrode-emitting material layer (2) of low work function is connected with the conductor. An n-conducting semiconductor (3) of high work function is made from magnesium or aluminum. A thick layer of the semiconductor is made from bismuth sulfide or bismuth antimonide, where the semiconductor has low thermal conductivity. Another conductor (4) is formed on a cold side with a surface of work function corresponding to the semiconductor.
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