Mirror for the euv - wavelength range, manufacturing process for such a mirror, projection lens system for microlithography with such a mirror and a projection exposure system for microlithography with such a projection objective

摘要

The present invention relates to a mirror (1a; 1b; 1c; 1d) for the euv - wavelength range comprising a reflectivity of greater than 40% for at least one angle of incidence between 0° and 25° comprising a substrate (s) and a layer arrangement, wherein the layer arrangement at least one layer system (asl), which consists of a periodic sequence of at least two periods (p_Asl) on individual layers (l_Asl, B, h_Asl) consists of different materials, and wherein the layer system (asl) an oxygen doping of between 10 ppb and 0,1%, in particular between 50 ppb and 50 ppm. In addition, the invention relates to a method for coating of a mirror (1a; 1b; 1c; 1d) for the euv - wavelength range, and in the case of the coating of the layer system (asl) with oxygen doping an oxygen partial pressure of greater than 10^–9 mbar; in particular of greater than 10^–7 mbar is present. Furthermore, the invention relates to a projection lens system for microlithography with such a mirror, as well as a projection exposure system with such a projection objective.