A method for reducing the equivalence thickness of dielektriika with a large ε in feldeffekttranistoren by carrying out an annealing process at a low temperature

摘要

In the manufacture of complex metal gate electrodes structures with a large ε, for example, on the basis of a replacement gate method, improved interface properties is achieved by a thermally grown base material is used, wherein the electrically effective thickness on the basis of an annealing process with a low temperature is reduced. Consequently, the better interface properties of a thermally grown base material, can be used, without baking processes in the case of high temperature are required, such as they are typically be used in conventional strategies, in which a very thin oxide layer is used, which is on the basis of a wet oxidation chemie is generated.