A method of manufacturing a semiconductor device comprising metal gate electrodes

摘要

A method for producing semiconductor devices which have metal gate electrodes comprises forming an insulating layer (5) on a semiconductor substrate (1) which has a first region (A) and a second region (B). The insulating layer (5) is formed to include an interlayer insulating layer (15) and a gate insulating layer. The interlayer insulating layer (15) has a first and a second groove (15a, 15b) which are arranged in the first and second regions (A, B), respectively, and the gate insulating layer covers at least bottom surfaces of the first and second grooves ( 15a, 15b). A laminated metal layer (22) is formed on the substrate (1) with an insulating layer (5). A planarization layer (23), which has no photosensitivity, is formed on the laminated metal layer (22). The planarization layer (23) in the first region (A) is selectively removed using a dry etch to expose the laminated metal layer (22) in the first region (A) and to form a planarization layer pattern (23p) which the laminated metal layer (22) covered in the second area (B).