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integrated circuit comprising a terminal not dedicated of reception of a high programming voltage vpp

机译:包括不专用于接收高编程电压vpp的端子的集成电路

摘要

The circuit (IC2) has a memory (MEM2) e.g. electrically EPROM, that is electrically erasable and/or programmable using voltages (HV, Vpp) greater than power supply voltage (Vdd). A receiving unit receives the voltage by a supply voltage receiving terminal (P1) or by receiving or emitting terminals (P2, P3) for data/clock signals (S1, S2). The receiving unit is formed by voltage step-up circuit (LSCT), comparator (CMP) and timer-sequencer circuit (TSCT). A control circuit (CCT2) executes memory programming and/or erasing controls. Independent claims are also included for the following: (1) an electronic system comprising an integrated circuit with memory (2) a method for writing data in the integrated circuit.
机译:电路(IC2)具有一个存储器(MEM2),例如电气EPROM,可使用大于电源电压(Vdd)的电压(HV,Vpp)进行电气擦除和/或编程。接收单元通过电源电压接收端子(P1)或通过接收或发射端子(P2,P3)接收数据/时钟信号(S1,S2)的电压。接收单元由升压电路(LSCT),比较器(CMP)和定时器定序器电路(TSCT)组成。控制电路(CCT2)执行存储器编程和/或擦除控制。还包括以下方面的独立权利要求:(1)包括具有存储器的集成电路的电子系统(2)用于在集成电路中写入数据的方法。

著录项

  • 公开/公告号FR2951576B1

    专利类型

  • 公开/公告日2011-12-16

    原文格式PDF

  • 申请/专利权人 STMICROELECTRONICS ROUSSET SAS;

    申请/专利号FR20090005025

  • 发明设计人 FRANCOIS TAILLIET;

    申请日2009-10-20

  • 分类号G11C16/06;G11C16/14;

  • 国家 FR

  • 入库时间 2022-08-21 17:04:17

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