STRUCTURE OF NANOCRYSTAL SILICON ELECTRON EMITTER ARRAY ELECTRON SOURCE AND METHOD FOR MANUFACTURING THE SAME

摘要

PROBLEM TO BE SOLVED: To provide an nc-Si electron emitter array structure suitable for integration with an LSI circuit for control drive, and a method for manufacturing the nc-Si electron emitter array structure.;SOLUTION: A nanocrystal electron emitter array including a plurality of electron emitters is formed by, after the deposition of a protective layer on an entire surface of a polycrystalline silicon film which is provided on an SOI substrate having an active layer and processed in a dot array, opening the protective layer in a specified region by etching to expose a surface part of polycrystalline silicon, and subjecting the exposed surface part of polycrystalline silicon to selective anodic oxidation. Substrate through wiring penetrating through the SOI substrate is buried so as to be electrically connected to each electron emitter, and a connection electrode is provided at an end of the substrate through wiring. The nanocrystal silicon electron emitter array and an LSI for control drive thereof are joined via the connection electrode.;COPYRIGHT: (C)2013,JPO&INPIT