MULTILAYER THIN FILM HAVING HETERO EPITAXIAL PN JUNCTION OXIDE THIN FILM

摘要

PROBLEM TO BE SOLVED: To provide means for laminating semiconductor layers while maintaining excellent crystallinity, as it is, by bonding different kinds of semiconductor on the boundary surface, showing an abrupt composition change at the atomic layer level, by crystal growth technique, just like hetero PN junction.SOLUTION: In a multilayer thin film having a PN junction oxide thin film formed on a single crystal substrate 2, the N type semiconductor oxide thin film 6 and the P type semiconductor oxide thin film 7 in the PN junction oxide thin film consist, respectively, of a multilayer thin film 1 having a hetero epitaxial PN junction oxide thin film, epitaxially grown in the C axis orientation represented by (00k).