Conductivity modulation of silicon carbide bipolar junction transistor within

摘要

The present invention relates to a method and SiCBJT to manufacture silicon carbide (SiC) bipolar junction transistor (BJT). (100) has a (160) emitter region (140) and (120), the base region collector region SiCBJT. The method of the present invention, the method comprising providing a (180) an intermediate region of semiconductor material disposed between the contact zones that make electrical contact to the base region and the base-emitter junction, the base region the base-emitter junction ( it is formed and the emitter region 120) and (160). The degree of conductivity modulation in (120) the collector region is determined by adjusting at least one parameter of the (180) an intermediate region which affects the diffusion current of minority carriers intermediate region (180) inside.