The projection exposure device for the micro lithography which has the projection object glass, and the particular object glass for the micro lithography which has the mirror and the particular mirror for the EUV wave length limits

摘要

EUV-mirror having a substrate (S) and a layer arrangement that includes plural layer subsystems (P, P) each consisting of a periodic sequence of at least two periods (P2, P3) of individual layers. The periods (P2, P3) include two individual layers composed of different materials for a high refractive index layer (H, H) and a low refractive index layer (L, L) and have within each layer subsystem (P, P) a constant thickness (d2, d3) that deviates from that of the periods of an adjacent layer subsystem. In one alternative, the layer subsystem (P) second most distant from the substrate has a period sequence (P2) such that the first high refractive index layer (H) of the layer subsystem (P) most distant from the substrate directly succeeds the last high refractive index layer (H) of the layer subsystem (P) second most distant from the substrate