Projection objective mirror for microlithography comprising mirror in the EUV wavelength range for a such a mirror, and projection exposure apparatus for microlithography with a projection objective mirror such

摘要

And a hierarchical structure is applied to a substrate, the hierarchical structure comprises (P '', P '' ') sub-layer system of a plurality, each sub-layer system, the present invention is at least composed of individual layers of a series Configure a periodic arrangement of _{(2, P 3 P)} cycle 1, the _{(2, P 3 P)} cycle, the low refractive index layer (H '', H '' ') and the high refractive index layer (L (P '', P 'with respect'), different from the period thickness of the sub-layer system adjacent each sub-layer system and comprises a separate layer of the two consisting of different materials as a '') 'L,' ' with a _{(2, d 3 d)} of constant thickness which, on mirrors for EUV wavelength range. In the mirror, the number of (P ₂₎ period films' ('sub-layer system farthest from the substrate (P' ') sub-layer system far away to second from the substrate P) is,' (N ₂₎ and a number of (P ₃₎ higher cycle (N _3), and the thickness of the '(' 'H) high refractive index layer of the sub-layer system furthest away from the substrate (P' ')' and / or, wherein to be 0.1nm and very different thickness (H '') high refractive index layer of the sub-layer system further away from the second substrate. Projection objective lens for microlithography comprising such a mirror and the invention further relates to a projection exposure apparatus including a projection objective lens such.