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Method of producing such substances in a vacuum using a post-chalcogenide techniques and chalcogenide-based material

机译:使用硫族化物后技术和基于硫族化物的材料在真空中生产此类物质的方法

摘要

The present invention provides a strategy for producing a CIGS light absorbing composition of the high-quality substrate (18) on the precursor (s) film was sputtered from (112). This precursor is S and "post-selenide" and / or when Se is used, for example (chalcogenides process using a technique capable of pressure under exceptionally low, to cause post-chalcogen treatment and by) are referenced, including when used in a "post-sulfide" as "post-chalcogenide" is converted into the CIGS absorber. Therefore, the strategy of the present invention, a continuous process, for example, easily incorporated into in a roll-to-roll process or batchwise process takes place under vacuum. The present invention is useful laboratory, on an industrial scale and pilot plant. (114), for example, is capped by elemental chalcogen second layer, which is then heat treated using the evaporation, the precursor film (112) to form chalcogenide layer (20). [Selection Figure Figure 3
机译:本发明提供了一种在从(112)溅射的前体膜上制备高质量基底(18)的CIGS光吸收组合物的策略。该前体是S和“硒化物后”,和/或在使用Se时,例如(在硫化氢中使用时)被引用(硫属化物工艺使用能够在极低的压力下引起硫属元素后处理的技术)。将“后硫化物”作为“后硫属化物”转化为CIGS吸收剂。因此,本发明的策略是在真空下进行例如容易地以卷对卷方法或分批方法加入的连续方法。本发明在工业规模上是有用的实验室和中试工厂。 (114)例如被元素硫属元素第二层覆盖,然后使用蒸发,前体膜(112)进行热处理以形成硫属元素化物层(20)。 [选择图图3

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