PATTERN FORMING METHOD, POSITIVE RESIST COMPOSITION FOR MULTIPLE DEVELOPMENT USED IN THE PATTERN FORMING METHOD, DEVELOPING SOLUTION FOR NEGATIVE DEVELOPMENT USED IN THE PATTERN FORMING METHOD, AND RINSING SOLUTION FOR NEGATIVE DEVELOPMENT USED IN THE PATTERN FORMING METHOD

摘要

PROBLEM TO BE SOLVED: To provide a method for stably forming a high-precision fine pattern used for a process of producing a semiconductor such as an IC, for production of a circuit board such as a liquid crystal, a thermal head, and for other photofabrication process, and to provide a resin composition used in the method, developing solution used in the method, and rinse solution for negative development used in the method.;SOLUTION: The invention provides a pattern forming method comprising the steps of: (I) coating a substrate with a positive resist composition of which solubility in a positive developing solution increases and solubility in a negative developing solution decreases by irradiation with active light rays or radiation ray; (II) exposing; and (III) developing with the negative developing solution. The invention also provides the positive resist composition for multiple-development used in the method, the developing solution used in the method, and rinse solution for negative development used in the method.;COPYRIGHT: (C)2013,JPO&INPIT