首页>
外国专利>
METHOD FOR FORMING RESIST PATTERN, RESIST PATTERN, CROSSLINKABLE NEGATIVE TYPE CHEMICALLY AMPLIFIED RESIST COMPOSITION FOR ORGANIC SOLVENT DEVELOPMENT, MOLD FOR NANOIMPRINT, AND PHOTOMASK
METHOD FOR FORMING RESIST PATTERN, RESIST PATTERN, CROSSLINKABLE NEGATIVE TYPE CHEMICALLY AMPLIFIED RESIST COMPOSITION FOR ORGANIC SOLVENT DEVELOPMENT, MOLD FOR NANOIMPRINT, AND PHOTOMASK
PROBLEM TO BE SOLVED: To provide a method for forming a resist pattern, which allows formation of a pattern satisfying demands for high sensitivity and high resolution (for example, high resolving power and low line edge roughness (LER)) as well as reducing a residue in an unexposed part, and to provide a resist pattern, a developing solution, a crosslinkable negative type chemically amplified resist composition for organic solvent development, a mold for nanoimprint, and a photomask.;SOLUTION: The method for forming a resist pattern includes the steps of, in the following sequence, forming a resist film by using a resist composition described below, exposing the film and developing the film after exposure by using a developing solution containing an ester-based solvent having 7 or 8 carbon atoms. The resist composition is a negative type chemically amplified resist composition comprising: a polymeric compound having a repeating unit expressed by general formula (1); a phenolic compound having two or more benzene rings and four or more alkoxymethyl groups, which crosslinks the above polymeric compound by an action of an acid; and a compound generating an acid by irradiation with actinic rays or radiation.;COPYRIGHT: (C)2013,JPO&INPIT
展开▼