首页> 外国专利> Adhesive sheet for semiconductor wafer back grinding and semiconductor wafer back grinding method using this back grinding adhesive sheet

Adhesive sheet for semiconductor wafer back grinding and semiconductor wafer back grinding method using this back grinding adhesive sheet

机译:半导体晶片背面研磨用粘合片及使用该背面研磨粘合片的半导体晶片背面研磨方法

摘要

The invention provides an adhesive sheet for grinding a back surface of a semiconductor wafer, which is to be adhered to a circuit forming surface of the semiconductor wafer when the back surface of the semiconductor wafer is ground, in which the adhesive sheet contains an adhesive layer, an intermediate layer and a substrate in this order from the circuit forming surface side, the intermediate layer has a JIS-A hardness of more than 55 to less than 80, and the intermediate layer has a thickness of 300 to 600 µm. Furthermore, the invention also provides a method for grinding a back surface of a semiconductor wafer, including adhering the above-mentioned adhesive sheet to a circuit forming surface of the semiconductor wafer, followed by grinding the back surface of the semiconductor wafer.
机译:本发明提供一种用于研磨半导体晶片的背面的粘合片,该粘合片在研磨半导体晶片的背面时将其粘附至半导体晶片的电路形成表面,其中该粘合片包含粘合层。从电路形成表面侧开始,该中间层和中间层按此顺序排列,该中间层的JIS-A硬度大于55至小于80,并且中间层的厚度为300至600μm。此外,本发明还提供一种用于研磨半导体晶片的背面的方法,该方法包括将上述粘合片粘附至半导体晶片的电路形成表面,然后研磨该半导体晶片的背面。

著录项

  • 公开/公告号JP5318435B2

    专利类型

  • 公开/公告日2013-10-16

    原文格式PDF

  • 申请/专利权人 日東電工株式会社;

    申请/专利号JP20080049878

  • 发明设计人 川嶋 教孔;浅井 文輝;

    申请日2008-02-29

  • 分类号H01L21/304;C09J7/02;

  • 国家 JP

  • 入库时间 2022-08-21 16:58:41

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