Production method of the silicon substrate where surface quality changes, and the silicon substrate null silicon substrate where surface

摘要

As for this invention, the silicon substrate (1) in regard to production method, as for the said production method, process and the many hole which provide the silicon substrate which substantially possesses the even silicon surface the porous silicon surface which it possesses (2), especially the macro hole and/or the meso hole and/or the following kind of packing material which it should insert in process and the silicon which form the porous silicon surface which possesses the nano- hole (3), namely, the packing material which possesses the diameter whose the said hole (2) is smaller than diameter process and the said packing material which (3) are provided with process and the case where (3) it inserts in the said hole (2)The said hole which was formed the excessive packing material (3) process and the said hole which are removed from the said silicon substrate the packing material which fills up in (2) said silicon substrate which it possesses (3) (1), by annealing doing at temperature between approximately 1000 - approximately 1400 , closing (2), the said packing material it features that it possesses the process which (3) is shut in.