Semiconductor device fabrication using the method of blocking mask and multiple exposures in order to reduce the design rule violation

摘要

A method of fabricating a semiconductor device begins by forming a layer of hard mask material on a substrate comprising a layer of semiconductor material and a layer of insulating material overlying the layer of semiconductor material, such that the layer of hard mask material overlies the layer of insulating material. A multiple exposure photolithography procedure is performed to create a combined pattern of photoresist features overlying the layer of hard mask material, and a recess line pattern is in the hard mask material, using the combined pattern of photoresist features. The method continues by covering designated sections of the recess line pattern with a blocking pattern of photoresist features, and forming a pattern of trenches in the insulating material, where the pattern of trenches is defined by the blocking pattern of photoresist features and the hard mask material. Thereafter, an electrically conductive material is deposited in the trenches, resulting in conductive lines for the semiconductor device.