Suppression method of lattice defects in the semiconductor substrate

摘要

After the dopant filling for the crystal lattice, the method of controlling the fact that the defect which promotes leak is formed to the lattice. Process of the aforementioned method offers the compressed layer which consists of the atom whose size is larger than the atom which forms the lattice. Although next, the lattice intermittent falling atom is discharged from compressed layer, sufficient time, the lattice annealing is done. Like this by the fact that it does, the defect which is stabilized energy, alienating from compressed layer, it is formed inside the lattice.