Thin film formation manner and being true aerial

摘要

PPROBLEM TO BE SOLVED: To provide a thin-film-forming technology which can minimize a degassing quantity in order to avoid excessive etching due to a remaining gas or a gas degassed from a substrate in a vacuum chamber. PSOLUTION: The thin-film-forming method includes a plasma (etching) treatment step S3 of exposing an organic layer formed on an object to be film-formed thereon to a plasma atmosphere in a vacuum, and an SiOSB2/SB-film-forming step S4 of forming a layer of an SiOSB2/SBfilm on the organic layer of the object to be film-formed thereon in the vacuum. The thin-film-forming method further has a heating step S2 of heating the organic layer on the object to be film-formed thereon in the vacuum, prior to the plasma treatment (etching) step S3 of a plasma exposure step. An atmosphere temperature in the heating step S2 is set higher than the atmosphere temperature in the plasma treatment step S3 and the SiOSB2/SB-film-forming step S4. PCOPYRIGHT: (C)2009,JPO&INPIT