Group III method of manufacturing a nitride semiconductor fine columnar crystals and group III nitride structure

摘要

PROBLEM TO BE SOLVED: To control the position and the shape of the fine columnar crystals of a group III nitride semiconductor by selectively growing the fine columnar crystals composed of the group III nitride semiconductor.;SOLUTION: This method for manufacturing the fine columnar crystals includes a process for forming a film having a surface composed of a metal nitride or a metal oxide in a predetermined area of the surface of a substrate, and a process for introducing a growth raw material onto the surface of the substrate and growing fine columnar crystals composed of the group III nitride semiconductor at least on an area where the film is formed and the growth of the fine columnar crystals is accelerated.;COPYRIGHT: (C)2008,JPO&INPIT