Being the mannered null metal source electrode and metal drain electrode and metal gate electrode in order to use the occasion where

摘要

Being the metal source electrode and metal drain electrode and metal gate electrode and transistor device which possesses with the channel inside the semi-conducting material which is made to accumulate, the 2nd metal part of 1st layer and the metal source electrode which include the 1st metal part of the metal gate electrode and the metal source electrode, and the 1st metal part of the metal drain electrode and the 2nd metal part of the metal drain electrode, the 2nd layer which includes the semi-conducting material, and the semi-conducting material and is with the metal gate electrodes the dielectric material which are made to accumulate and the 3rd layer which includes the baseplate implication,1st layer, 2nd layer and as for 3rd layer, the transistor device which consists of the kind of order where 2nd layer is arranged with 1st layer and 3rd layer.