Photoinduced carrier lifetime measurement method, light incidence efficiency measurement method, photoinduced carrier lifetime measurement device, and light incidence efficiency measurement device

摘要

Provided is a photoinduced carrier lifetime measurement method capable of obtaining the effective lifetime of photoinduced carriers in a semiconductor substrate with high accuracy regardless of the surface state of a sample. A semiconductor substrate is periodically pulsed with induced light, and the semiconductor substrate is irradiated with microwaves. The microwave transmitted through the semiconductor substrate or reflected by the semiconductor substrate is detected. Based on the irradiation time T1 and non-irradiation time T2 at the time of pulse irradiation of the induced light, and the integrated value of each microwave intensity obtained by the detection, the light induction generated in the semiconductor substrate by the pulse irradiation of the induced light. Get an effective career lifetime. [Selection] Figure 3