It has the silicon content formation which possesses the surface direction which is laid out on the substrate possessing bigger coefficient of thermal expansion 110Si than the electron in

摘要

The present invention provides a semiconductor material that has enhanced electron and hole mobilities that comprises a Si-containing layer having a 110 crystal orientation and a biaxial compressive strain. The term “biaxial compressive stress” is used herein to describe the net stress caused by longitudinal compressive stress and lateral stress that is induced upon the Si-containing layer during the manufacturing of the semiconductor material. Other aspect of the present invention relates to a method of forming the semiconductor material of the present invention. The method of the present invention includes the steps of providing a silicon-containing 110 layer; and creating a biaxial strain in the silicon-containing 110 layer.