Extending to the whole in the thin film production manner due to

摘要

As it utilizes the atmospheric pressure plasma where by the fact that the target of the metal and metal chemical compound is designated as the main raw materials, the necessity to use the harmful gas of the organic metal gas and the like is gone, under the normal pressure occurs, as the reaction place as a heat source formation method of the metal chemical compound thin film of the adhesion satisfactory metal or that oxide or the nitride etc and that its formation device is offered are designated as purpose to on the baseplate of silicon and the ceramics etc which are the high fusion point material by the fact that it utilizes. Extending to the whole in the thin film production method due to microplasma method, as it installs the raw materials for thin film formation inside narrow tube A whose inside diameter is uniform introduces the inert gas into the said narrow tube A impressing high frequency voltage, while generating the high frequency plasma inside narrow tube A, 1 or maintaining the flux and hot plasma gas temperature of the plasma gas inside plural narrow tube A in high temperature as it heats & evaporates the aforementioned raw materials, making the material erupt which evaporates from narrow tube, A it irradiates on the baseplate, it heats the baseplate with the aforementioned plasma gas, the material which was irradiated under atmospheric pressureIt makes accumulate on the baseplate.