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Method for producing a transparent conductive film, the manufacturing apparatus of the transparent conductive film, transparent conductive film and sputtering target

机译:透明导电膜的制造方法,透明导电膜的制造装置,透明导电膜和溅射靶

摘要

Provides can not be used SOLVED] steam, to form a transparent conductive film having conductive properties and etching characteristics good, the method for producing a transparent conductive film. A first component consisting of indium oxide, a second component consisting of tin oxide, method for producing a transparent conductive film according to an embodiment of the present invention comprises, La, Nd, Dy, Eu, Gd, Tb , by sputtering a target material comprising a third component consisting of an oxide of, or at least one element selected from Zr, Al, Si, and B and Ti, indium tin oxide thin film on a substrate and includes a step of forming, a step of patterning an etching solution the indium tin oxide thin film, and a step of crystallization by heat treatment of the indium tin oxide thin film. Thus, ITO film immediately after deposition is also now etchable a weak acid, it is possible to impart conductivity to the desired characteristics of the ITO film. [Selection Figure Figure 4
机译:提供不能用[SOLVED]蒸汽处理,以形成具有导电性能和蚀刻特性良好的透明导电膜的方法,用于制备透明导电膜。根据本发明实施方式的用于制备透明导电膜的方法,由氧化铟构成的第一组分,由氧化锡构成的第二组分包括通过溅射靶材而形成的La,Nd,Dy,Eu,Gd,Tb。包含在基板上的铟锡氧化物薄膜,该第三成分由选自Zr,Al,Si和B和Ti的氧化物或至少一种元素的第三成分组成的铟锡氧化物薄膜,并且包括形成步骤,构图蚀刻溶液的步骤氧化铟锡薄膜,以及通过热处理氧化铟锡薄膜的结晶步骤。因此,沉积之后立即的ITO膜现在也可蚀刻为弱酸,可以赋予ITO膜所需的特性导电性。 [选择图图4

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