Processing method of a semiconductor surface using the same and semiconductor surface for treatment composition

摘要

Semiconductor surface which comprises using the composition and the semiconductor surface for a treatment composition which can be released quickly and easily, anti-reflection coating layer in the manufacturing process of a semiconductor device, such as a cured resist layer and the resist layer The object of the present invention is to provide a method of treating, a compound generating a fluoride ion in (I) water, (II) a carbon radical generating agent, (III) water, (IV) an organic solvent, and the present invention, [V] Features semiconductor surface processing chemical composition characterized by containing at least one compound selected from the group consisting of hydroxylamine derivatives represented by the general formula and hydroxylamine [1], that as well as the use of the composition It is an invention relates to a process for the treatment of semiconductor surface that. (In the formula, a linear 1 to 6 carbon atoms, R ¹ is substituted alkyl linear or branched 1 to 4 carbon atoms having 1 to 3 hydroxyl groups or a cyclic alkyl group or a branched represents a group, a linear hydrogen atoms, having a carbon number 1~6, R ² is linear or branched having 1 to 4 carbon atoms having 1 to 3 hydroxyl groups or a cyclic alkyl group or a branched . represent a substituted alkyl group)