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Semiconductor Device Having A Modified Shallow Trench Isolation (STI) Region And A Modified Well Region
Semiconductor Device Having A Modified Shallow Trench Isolation (STI) Region And A Modified Well Region
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机译:具有修改的浅沟槽隔离(STI)区和修改的阱区的半导体器件
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摘要
An apparatus is disclosed to increase a breakdown voltage of a semiconductor device. The semiconductor device can include a modified breakdown shallow trench isolation (STI) region to effectively reduce its drain to source resistance when compared to a conventional semiconductor device. This reduction in the drain to source resistance increases the breakdown voltage of the semiconductor device when compared to the conventional semiconductor device by allowing more current to pass from a source region to a drain region of the semiconductor device. The semiconductor device can include a modified well region to reduce its drain to source resistance. The modified well region allows more current to pass from a source region to a drain region of the semiconductor device, thereby further increasing the break down voltage of the semiconductor device from that of the conventional semiconductor device.
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