首页> 外国专利> METHOD OF FORMING A VDF OLIGOMER OR CO-OLIGOMER FILM ON A SUBSTRATE AND AN ELECTRICAL DEVICE COMPRISING THE VDF OLIGOMER OR CO-OLIGOMER FILM ON THE SUBSTRATE

METHOD OF FORMING A VDF OLIGOMER OR CO-OLIGOMER FILM ON A SUBSTRATE AND AN ELECTRICAL DEVICE COMPRISING THE VDF OLIGOMER OR CO-OLIGOMER FILM ON THE SUBSTRATE

机译:在基板上形成VDF低聚物或共聚膜的方法以及在基板上构成VDF低聚物或共聚膜的电子设备

摘要

A method of forming a vinylidene fluoride (VDF) oligomer or co-oligomer film on a substrate is disclosed. The method comprises forming a VDF oligomer or co-oligomer precursor solution; depositing the VDF oligomer or co-oligomer precursor solution onto the substrate to form a preliminary VDF oligomer or co-oligomer film on the substrate; and applying uniaxial pressure on the preliminary VDF oligomer or co-oligomer film and the substrate at an elevated temperature to form the VDF oligomer or co-oligomer film on the substrate. The substrate may comprise a metal surface which may be used as a bottom electrode and a top electrode may be deposited on the VDF oligomer or co- oligomer film The VDF oligomer or co-oligomer film, the bottom electrode on the substrate and the top electrode on the VDF oligomer or co-oligomer film form an electrical device.
机译:公开了一种在基板上形成偏二氟乙烯(VDF)低聚物或共低聚物膜的方法。该方法包括形成VDF低聚物或共低聚物前体溶液;将VDF低聚物或共低聚物前体溶液沉积到基底上,以在基底上形成初步的VDF低聚物或共低聚物膜;在升高的温度下,对初步的VDF低聚物或共低聚物膜和基材施加单轴压力,以在基材上形成VDF低聚物或共低聚物膜。衬底可以包括可用作底电极的金属表面,并且顶电极可以沉积在VDF低聚物或共低聚物膜上。VDF低聚物或共低聚物膜,衬底上的底电极和顶电极在VDF低聚物或共低聚物薄膜上形成电子器件。

著录项

  • 公开/公告号US2012313482A1

    专利类型

  • 公开/公告日2012-12-13

    原文格式PDF

  • 申请/专利权人 KUI YAO;SHUTING CHEN;ENG HOCK FRANCIS TAY;

    申请/专利号US200913518866

  • 发明设计人 KUI YAO;SHUTING CHEN;ENG HOCK FRANCIS TAY;

    申请日2009-12-23

  • 分类号B05D7/24;B05D3/12;B05D5/12;H01L41/22;H01L41;H01L43/10;H01L43/12;H01G4;G01J5;B05D3/02;H01G13;

  • 国家 US

  • 入库时间 2022-08-21 16:52:35

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