DATA READ CIRCUIT, NONVOLATILE MEMORY DEVICE COMPRISING DATA READ CIRCUIT, AND METHOD OF READING DATA FROM NONVOLATILE MEMORY DEVICE

摘要

A nonvolatile memory device comprises a nonvolatile cell array comprising a memory cell and a reference cell, a clamping circuit electrically connected to the memory cell and configured to clamp a voltage applied to a data sensing line during a read operation, and a clamping voltage generation unit configured to generate a clamping voltage responsive to a first voltage having a level based on the reference cell, and to feed back the clamping voltage to the clamping circuit.