首页> 外国专利> Dendritic Metal Structures, Methods for Making Dendritic Metal Structures, and Devices Including Them

Dendritic Metal Structures, Methods for Making Dendritic Metal Structures, and Devices Including Them

机译:树枝状金属结构,制造树枝状金属结构的方法以及包括它们的装置

摘要

The present invention relates generally to dendritic metal structures and devices including them. The present invention also relates particularly to methods for making dendritic metal structures without the use of solid electrolyte materials. In one aspect, a method for constructing a dendritic metal structure includes providing a substrate having a surface and a cathode disposed on the surface; providing an anode comprising a metal; and disposing a liquid on the surface of the substrate, such that the liquid is in electrical contact with the anode and the cathode; and then applying a bias voltage across the cathode and the anode sufficient to grow the dendritic metal structure extending from the cathode. The methods described herein can be used to grow dedritic metal electrodes, which can be useful in devices such as LEDs, touchscreens, solar cells and photodetectors.
机译:本发明总体上涉及树枝状金属结构和包括它们的装置。本发明还特别涉及在不使用固体电解质材料的情况下制造树枝状金属结构的方法。在一个方面,一种用于构造树枝状金属结构的方法包括:提供具有表面和设置在该表面上的阴极的衬底;以及将阴极设置在表面上。提供包含金属的阳极;在基板的表面上设置液体,使液体与阳极和阴极电接触。然后在阴极和阳极之间施加足以使从阴极延伸的树枝状金属结构生长的偏置电压。本文所述的方法可用于生长树枝状金属电极,其可用于诸如LED,触摸屏,太阳能电池和光电探测器的装置中。

著录项

  • 公开/公告号US2013228821A1

    专利类型

  • 公开/公告日2013-09-05

    原文格式PDF

  • 申请/专利权人 MICHAEL N. KOZICKI;MINGHAN REN;

    申请/专利号US201113883524

  • 发明设计人 MICHAEL N. KOZICKI;MINGHAN REN;

    申请日2011-11-11

  • 分类号H01L21/288;H01L31/0224;H01L33/38;H01L29/41;

  • 国家 US

  • 入库时间 2022-08-21 16:49:44

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