首页> 外国专利> POWER SEMICONDUCTOR ARRANGEMENT, POWER SEMICONDUCTOR MODULE WITH MULTIPLE POWER SEMICONDUCTOR ARRANGEMENTS, AND MODULE ASSEMBLY COMPRISING MULTIPLE POWER SEMICONDUCTOR MODULES

POWER SEMICONDUCTOR ARRANGEMENT, POWER SEMICONDUCTOR MODULE WITH MULTIPLE POWER SEMICONDUCTOR ARRANGEMENTS, AND MODULE ASSEMBLY COMPRISING MULTIPLE POWER SEMICONDUCTOR MODULES

机译:功率半导体装置,具有多个功率半导体装置的功率半导体模块以及由多个功率半导体模块组成的模块

摘要

A power semiconductor arrangement includes a base plate having a molybdenum layer, and a power semiconductor device mounted to a top side of the base plate and electrically and thermally coupled thereto. The base plate includes a metallic mounting base, which is arranged between the semiconductor device and the molybdenum layer and prevents the molybdenum layer from forming highly resistive intermetallic phases with the semiconductor device. A semiconductor module, such as a power semiconductor module, includes multiple semiconductor arrangements, whereby the base plate of the semiconductor arrangements is a common base plate. A module assembly, such as a power semiconductor module assembly, includes multiple semiconductor modules, whereby the semiconductor modules are arranged side by side to each other with electric connections between adjacent semiconductor modules.
机译:功率半导体装置包括:具有钼层的基板;以及功率半导体器件,其安装至所述基板的顶侧并与其电热耦合。基板包括金属安装基座,该金属安装基座布置在半导体器件和钼层之间,并防止钼层与半导体器件形成高电阻金属间相。诸如功率半导体模块的半导体模块包括多个半导体布置,其中,半导体布置的基板是公共基板。诸如功率半导体模块组件之类的模块组件包括多个半导体模块,由此,半导体模块彼此并排布置,并且在相邻的半导体模块之间具有电连接。

著录项

  • 公开/公告号US2013043579A1

    专利类型

  • 公开/公告日2013-02-21

    原文格式PDF

  • 申请/专利权人 FRANC DUGAL;

    申请/专利号US201213588727

  • 发明设计人 FRANC DUGAL;

    申请日2012-08-17

  • 分类号H01L23/06;

  • 国家 US

  • 入库时间 2022-08-21 16:49:41

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