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RAPID FABRICATION METHODS FOR FORMING NITRIDE BASED SEMICONDUCTORS BASED ON FREESTANDING NITRIDE GROWTH SUBSTRATES
RAPID FABRICATION METHODS FOR FORMING NITRIDE BASED SEMICONDUCTORS BASED ON FREESTANDING NITRIDE GROWTH SUBSTRATES
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机译:基于自由氮化物生长基质形成基于氮化物的半导体的快速制备方法
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摘要
High temperature bonding and interconnect methods can be used for LED and other optoelectronic devices based on freestanding nitride devices. Inorganic glasses, especially those which exhibit a CTE, which substantially matches the CTE of the freestanding nitride devices, can provide hermetic sealing of the freestanding nitride devices or the contact regions of the freestanding nitride devices. The freestanding nitride devices are typically freestanding nitride veneers.
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