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Method using low temperature wafer bonding to fabricate transistors with heterojunctions of Si(Ge) to III-N materials
Method using low temperature wafer bonding to fabricate transistors with heterojunctions of Si(Ge) to III-N materials
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机译:使用低温晶圆键合制造具有Si(Ge)到III-N材料异质结的晶体管的方法
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摘要
A method for fabricating an electronic device, comprising wafer bonding a first semiconductor material to a III-nitride semiconductor, at a temperature below 550° C., to form a device quality heterojunction between the first semiconductor material and the III-nitride semiconductor, wherein the first semiconductor material is different from the III-nitride semiconductor and is selected for superior properties, or preferred integration or fabrication characteristics in the injector region as compared to the III-nitride semiconductor.
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