首页> 外国专利> METHOD OF GENERATING STANDARD CELL LIBRARY FOR DPL PROCESS AND METHODS OF PRODUCING A DPL MASK AND CIRCUIT PATTERN USING THE SAME

METHOD OF GENERATING STANDARD CELL LIBRARY FOR DPL PROCESS AND METHODS OF PRODUCING A DPL MASK AND CIRCUIT PATTERN USING THE SAME

机译:生成用于DPL过程的标准单元库的方法以及使用该方法生成DPL掩码和电路图形的方法

摘要

A method of constructing a standard cell library for double patterning lithography (DPL) includes dividing a standard cell into a first region determined not to have an interaction with an adjacent outer cell and a second region that is likely to have such an interaction, generating data representative of DPL patterns corresponding to the first and second regions, and generating a standard cell library made up of the data. The library is then accessed and used to form a DPL mask. The DPL mask can be used to form a pattern on a substrate made up of a layout of cells in which the pattern of the standard cell is duplicated at several locations in the layout.
机译:一种构造用于双重图案化光刻(DPL)的标准单元库的方法,包括将标准单元划分为确定为与相邻外部单元不存在相互作用的第一区域和可能具有这种相互作用的第二区域,并生成数据代表对应于第一和第二区域的DPL模式,并生成由数据组成的标准单元库。然后访问该库,并将其用于形成DPL掩码。 DPL掩模可以用于在由单元的布局组成的基板上形成图案,其中标准单元的图案在布局中的多个位置处被复制。

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