COMPOSITIONS USED IN FORMATION OF OXIDE MATERIAL LAYERS, METHODS OF FORMING AN OXIDE MATERIAL LAYER USING THE SAME, AND METHODS OF FABRICATING A THIN FILM TRANSISTOR USING SAME

摘要

Methods of forming an oxide material layer are provided. The method includes mixing a precursor material with a peroxide material to form a precursor solution, coating the precursor solution on a substrate, and baking the coated precursor solution.