Raw material for thin film formation for atomic layer deposition, thin film manufacturing method and alkoxide compound

摘要

A raw material for forming a thin film for an atomic layer deposition method containing an alkoxide compound represented by the following general formula (1). (Wherein, R 1 represents a hydrogen atom or an alkyl group having 1 to 5 carbon atoms. R 2 and R 3 each independently represent an alkyl group having 1 to 5 carbon atoms. z 1 is an integer of 1 to 3 indicates.)