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Method for reducing line width roughness with plasma pre-etch treatment on photoresist
Method for reducing line width roughness with plasma pre-etch treatment on photoresist
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机译:在光刻胶上进行等离子体预蚀刻处理以减小线宽粗糙度的方法
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摘要
A method for reducing line width roughness (LWR) of a feature in an etch layer below a patterned photoresist mask having mask features is provided. The method includes (a) non-etching plasma pre-etch treatment of the photoresist mask, and (b) etching of a feature in the etch layer through the pre-treated photoresist mask using an etching gas. The non-etching plasma pre-etch treatment includes (a1) providing a treatment gas containing H2 and COS, (a2) forming a plasma from the treatment gas, and (a3) stopping the treatment gas.
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