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Semiconductor device with vertical current flow and low substrate resistance and manufacturing process thereof
Semiconductor device with vertical current flow and low substrate resistance and manufacturing process thereof
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机译:具有垂直电流和低衬底电阻的半导体器件及其制造工艺
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摘要
A semiconductor device with vertical current flow includes a body having a substrate made of semiconductor material. At least one electrical contact on a first face of the body. A metallization structure is formed on a second face of the body, opposite to the first face. The metallization structure is provided with metal vias, which project from the second face within the substrate so as to form a high-conductivity path in parallel with portions of said substrate.
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