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P-I-N diode crystallized adjacent to a silicide in series with a dielectric material
P-I-N diode crystallized adjacent to a silicide in series with a dielectric material
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机译:与电介质材料串联的硅化物附近结晶的P-I-N二极管
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摘要
A vertically oriented p-i-n diode is provided that includes semiconductor material crystallized adjacent a silicide, germanide, or silicide-germanide layer, and a dielectric material arranged electrically in series with the diode. The dielectric material has a dielectric constant greater than 8, and is adjacent a first metallic layer and a second metallic layer. Numerous other aspects are provided.
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