首页> 外国专利> Method for fabricating a 3D integrated circuit device having lower-cost active circuitry layers stacked before higher-cost active circuitry layer

Method for fabricating a 3D integrated circuit device having lower-cost active circuitry layers stacked before higher-cost active circuitry layer

机译:用于制造具有堆叠在低成本有源电路层之前的低成本有源电路层的3D集成电路器件的方法

摘要

A method is provided for fabricating a 3D integrated circuit structure. According to the method, a first active circuitry layer wafer that includes active circuitry is provided, and a first portion of the first active circuitry layer wafer is removed such that a second portion of the first active circuitry layer wafer remains. Another wafer that includes active circuitry is provided, and the other wafer is bonded to the second portion of the first active circuitry layer wafer. The first active circuitry layer wafer is lower-cost than the other wafer. Also provided are a tangible computer readable medium encoded with a program for fabricating a 3D integrated circuit structure, and a 3D integrated circuit structure.
机译:提供了一种用于制造3D集成电路结构的方法。根据该方法,提供了包括有源电路的第一有源电路层晶片,并且去除了第一有源电路层晶片的第一部分,使得保留了第一有源电路层晶片的第二部分。提供了包括有源电路的另一个晶片,并且另一个晶片结合到第一有源电路层晶片的第二部分。第一有源电路层晶片的成本低于另一晶片。还提供了编码有用于制造3D集成电路结构的程序的有形计算机可读介质以及3D集成电路结构。

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