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SEMICONDUCTOR DEVICE COMPRISING METAL GATE ELECTRODE STRUCTURES AND NON-FETS WITH DIFFERENT HEIGHT BY EARLY ADAPTATION OF GATE STACK TOPOGRAPHY
SEMICONDUCTOR DEVICE COMPRISING METAL GATE ELECTRODE STRUCTURES AND NON-FETS WITH DIFFERENT HEIGHT BY EARLY ADAPTATION OF GATE STACK TOPOGRAPHY
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机译:通过早期自适应门极断层摄影术而构成的具有不同高度的金属门极电极结构和非FET的半导体器件
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摘要
Gate height scaling in sophisticated semiconductor devices may be implemented without requiring a redesign of non-transistor devices. To this end, the semiconductor electrode material may be adapted in its thickness above active regions and isolation regions that receive the non-transistor devices. Thereafter, the actual patterning of the adapted gate layer stack may be performed so as to obtain gate electrode structures of a desired height for improving, in particular, AC performance without requiring a redesign of the non-transistor devices.
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